Category:MOSFETs: Difference between revisions

C

• Computer memory‎ (5 P)

G

• Graphics processing units‎ (1 P)

H

• High-κ dielectrics‎ (1 P)

I

• Image sensors‎ (3 P)
• International Technology Roadmap for Semiconductors lithography nodes‎ (1 P)

N

• Nanoelectronics‎ (8 P)

S

• Semiconductor device fabrication‎ (1 C, 5 P)

• MOSFET

2

• 2N7000

3

• 3N170

A

• Active-pixel sensor
• List of MOSFET applications
• Mohamed M. Atalla

B

• BiCMOS
• Bio-FET
• BSIM

C

• Channel length modulation
• Charge trap flash
• Charge-coupled device
• Chemical field-effect transistor
• CHMOS
• CMOS amplifier
• Computer memory
• Current–voltage characteristic

D

• Dennard scaling
• Depletion and enhancement modes
• Depletion region
• Depletion-load NMOS logic
• DNA field-effect transistor
• Drain-induced barrier lowering

E

• Edholm's law
• Electron mobility
• EOSFET

F

• Federico Faggin
• FET amplifier
• Field effect (semiconductor)
• Fin field-effect transistor
• Floating-gate MOSFET

G

• Gate dielectric
• Gate oxide
• GgNMOS

H

• High-electron-mobility transistor
• High-κ dielectric

I

• List of image resolutions used in digital cameras
• Image sensor
• Insulated-gate bipolar transistor
• ISFET

K

• Dawon Kahng

L

• LDMOS
• List of semiconductor scale examples

M

• Memory cell (computing)
• Metal gate
• Metal–nitride–oxide–semiconductor transistor
• Moore's law
• MOS-controlled thyristor
• MOSFET Gate Driver
• Multi-channel length
• Multigate device

N

• NMOS logic

O

• Overdrive voltage

P

• Passivation (chemistry)
• PMOS logic
• Polysilicon depletion effect
• Power MOSFET
• Power semiconductor device

Q

• QFET

R

• Radio-frequency engineering
• Reverse short-channel effect
• RF CMOS
• RF power amplifier

S

• Self-aligned gate
• Semiconductor device fabrication
• Semiconductor memory
• Short-channel effect
• Silicon on insulator
• Silicon on sapphire
• SONOS
• Subthreshold conduction
• Switched capacitor

T

• Thermal oxidation
• Thin-film transistor
• Three-dimensional integrated circuit
• Threshold voltage
• Transistor count
• Two-dimensional electron gas

V

• Variable retention time
• Very-large-scale integration
• VMOS
• Voltage regulator module

W

• Frank Wanlass