Information for "Insulated-gate bipolar transistor"
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Basic information
Display title | Insulated-gate bipolar transistor |
Default sort key | Insulated-gate bipolar transistor |
Page length (in bytes) | 40,508 |
Namespace ID | 0 |
Page ID | 12345 |
Page content language | en - English |
Page content model | wikitext |
Indexing by robots | Allowed |
Number of redirects to this page | 0 |
Counted as a content page | Yes |
Page image | ![]() |
Page protection
Edit | Allow all users (infinite) |
Move | Allow all users (infinite) |
Edit history
Page creator | 2406:7400:51:b7cd:81bb:a70e:8243:f7e4 (talk) |
Date of page creation | 15:18, 2 August 2025 |
Latest editor | 2406:7400:51:b7cd:81bb:a70e:8243:f7e4 (talk) |
Date of latest edit | 15:18, 2 August 2025 |
Total number of edits | 1 |
Total number of distinct authors | 1 |
Recent number of edits (within past 90 days) | 1 |
Recent number of distinct authors | 1 |