View source for MOS-controlled thyristor

{{Short description|Type of thyristor}}
[[File:MOS Controlled Thyristor.svg|thumb|Equivalent circuit of an MCT]]
An '''MOS-controlled thyristor (MCT)''' is a voltage-controlled fully controllable [[thyristor]], controlled by [[MOSFET]]s (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier [[insulated-gate bipolar transistor]] (IGBT).<ref>V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984.{{doi|10.1109/IEDM.1984.190697}}</ref> MCTs are similar in operation to [[GTO (thyristor)|GTO thyristor]]s, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal [[Silicon controlled rectifier|SCRs]]), is called an '''MOS-gated thyristor'''.

[[File:MOSFET Controlled Thyristor.JPG|thumb|Schematic of a MOSFET-controlled thyristor]]

'''Positive voltage''' on the gate terminal with respect to the cathode turns the thyristor to the on state.

'''Negative voltage''' on the gate terminal with respect to the anode, which is close to cathode voltage during the on state, turns the thyristor to the off state.

MCTs were commercialized only briefly. 

== External links ==
*[http://www.allaboutcircuits.com/vol_3/chpt_7/10.html Field-effect-controlled thyristor]
* "MOS GTO—A Turn Off Thyristor with MOS-Controlled Emitter Shorts," IEDM 85, M. Stoisiek and H. Strack, Siemens AG, Munich FRG pp.&nbsp;158–161.
* "MOS-Controlled Thyristors—A New Class of Power Devices", IEEE Transactions on Electron Devices, Vol. ED-33, No. 10, Oct. 1986, Victor A. K. Temple, pp.&nbsp;1609 through 1618.

==References==

<references/>

[[Category:Solid state switches]]
[[Category:Power electronics]]
[[Category:MOSFETs]]

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